发明名称 METHOD FOR CHEMICALLY TREATING SEMICONDUCTOR WAFER
摘要 PURPOSE:To treat a semiconductor wafer uniformly and with no adhesion of dusts by fixing the semiconductor wafer on a slope having a gradient, and causing a liquid to flow along the upper surface of the slope from the top of the slope. CONSTITUTION:The surface of a semiconductor wafer 4 is chemically treated continuously with more than two kinds of liquids. At that time, the wafer 4 is fixed on the upper surface of a slope 1 having a proper gradient. From the top of the slope 1, a liquid 5 is made to continuously flow on the upper surface of the wafer 4 along the slope 1 upper surface. The pouring of the liquid 5 is conducted by gradually putting a necessary amount of liquid B into a liquid reservoir 2 when the water level of a liquid A is approaching the neighborhood of a nozzle 3. With this, the wafer 4 is treated uniformly and with no adhesion of dusts.
申请公布号 JPS63174324(A) 申请公布日期 1988.07.18
申请号 JP19870006879 申请日期 1987.01.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MURATA MICHIO
分类号 H01L21/306 主分类号 H01L21/306
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