| 摘要 |
PURPOSE:To prevent the reaction of a high melting point metallic layer to a gate insulating film from occurring for preventing any defective breakdown strength of gate insulating film and the leakage current form occurring by a method wherein a high melting point metallic layer of nitride is provided on the interface between a high melting point metallic layer and the gate insulating film composing a gate. CONSTITUTION:A source 6a and a drain 6b are formed in an element region encircled by an element isolating region 2 on the surface of a silicon substrate. Then, a gate comprising a titanium layer 5b 2000-6000 Angstrom thick is provided through a titanium nitride layer 5a on a gate oxide film 3 on a silicon substrate 1 between the source 6a and the drain 6b. |
