| 摘要 |
PURPOSE:To prevent the disturbance of the stoichiometric composition of a compound semiconductor layer in an operating layer region just under a gate electrode, and to obviate the induction of the diffusion, etc., of a semiconductor crystal constituent element, etc., into the gate electrode by selectively forming ion implantation regions for source-drain through an ion implantation method and electrically activating the ion implantation regions through a dielectric heating method. CONSTITUTION:The surface of a compound semiconductor is coated with an silicon nitride film 5 in predetermined thickness, and spaces among ion implantation layers 6 to subsequent source drain regions and a gate electrode 3 are controlled by the thickness of the coated insulating film. The ions of an N-type impurity are implanted selectively into the source-drain regions, using a photo-resist pattern 4a as a mask. The photo-resist 4a is removed, and the surface of a compound semiconductor substrate is irradiated with microwave energy by magnetron oscillation in a nitrogen or hydrogen gas atmosphere, thus electrically activating the source-drain ion implantation layers. An ohmic electrode 7 made of AuGe/Ni, etc., is applied to the source-drain regions, and alloyed. Accordingly, a gallium arsenide Schottky junction type field-effect transistor employing a tungsten silicide as the gate electrode is shaped.
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