| 摘要 |
PURPOSE:To prevent the exposure of a PSG film, and to improve the moisture resistance of a semiconductor integrated circuit device by completely coating the side wall section of a cover window in the PSG film and an Si3N4 film with the Si3N4 film twice so as not to generate pad corrosion. CONSTITUTION:A section up to the side wall section of a PSG film 2 is coated with an Si3N4 film 3 in Al 1 for a bonding pad on an SiO2 inter-layer film 4. Al 5 for the bonding pad, a first cover window 6 and a second cover window 7 are formed. A PSG cover is etched as a first cover mask, and an Si3N4 cover is etched in a margin such as an approximately 8mum one completely covering the PSG film as a second cover mask. A side wall section after cover etching in a bonding pad section is shaped in a structure in which the PSG film is surrounded perfectly with the Si3N4. film as the upper layer section of the PSG film. Accordingly, the so-called pad corrosion corroding Al for the bonding pad is generated, and an electrical insulating state is generated, thus improving moisture resistance.
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