| 摘要 |
PURPOSE:To prevent the generation of the effect of pattern roughness and fineness, and to remove polycrystalline particles formed onto the pat tern at the time of the formation of a second GaAs active layer completely by shaping an insulating film to a non-epitaxial growth section having a wide area and getting rid of the insulating film after epitaxial growth. CONSTITUTION:One part of an insulating film 103 consisting of a film such as an SiO2 film is taken off through dry etching using a substance such as CF4 so as to leave the insulating film 103 on at least an electrode 102. A semiconductor epitaxial layer 104 such as a GaAs layer is grown onto a GaAs substrate 101. GaAs polycrystalline particles 105 are also grown onto the electrode 102. The GaAs epitaxial layer 104 except a required region is removed through wet etching employing substances such as H3PO4 and H2O2. The GaAs polycrystalline particles 105 on the electrode 102 coated with the SiO2 film 103 are not gotten rid of completely at that time. The SiO2 film is taken off through wet etching using a substance such as HF. The GaAs polycrystalline particles 105 grown onto the SiO2 film 103 are also removed simultaneously at that time, thus shaping the flat surface of the electrode 102.
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