| 摘要 |
PURPOSE:To make it possible to isolate elements completely, by forming a switching transistor in a vertical direction, forming a channel at the inside of a columnar semiconductor region, and forming the elements in a minute area. CONSTITUTION:A deep hole is provided in a part of a silicon substrate 101. A high concentration ion implanted layer 102 is formed. A first silicon oxide film 103 is formed. An n-type amorphous silicon layer 104 is thickly deposited so as to fill the recess part. The surface is flattened. A silicon single crystalline layer 108 is grown by an epitaxial growing method. At least a part of the n-type amorphous silicon layer 104 is formed into a single crystal. A silicon oxide film 109 is formed, and the n-type silicon layer 104 and the substrate silicon layer 101 are isolated. A low-concentration p-type second silicon epitaxial layer 110 is grown. A polycrystalline high-concentration N-type silicon film 112, which is a gate electrode material, is deposited. Ions are implanted, end a high-concentration n-type silicon layer 113 is formed in the second silicon epitaxial layer 110. A contact is formed and a wiring 115 is formed. |
