| 摘要 |
PURPOSE:To obtain a semiconductor manufacturing apparatus so that the highest temperature is obtained at the machining part of a semiconductor element, by changing the winding density of the coil wire of a heater so that a necessary temperature profile is obtained. CONSTITUTION:A coil wire 7 is wound so that the highest density is obtained at a point D, which is a machining (wire bonding) part of a semiconductor element 1. Thus a heater 6 is formed. The winding density of the coil wire 7 of the heater 6 is changed so that the density is higher in the machining part (wire bonding point). Thus temperatures (a), (b) and (c) at preheating parts (points A, B and C) slowly increase. A temperature (d) at the machining part (wire bonding part) becomes the highest temperature. |
