| 摘要 |
PURPOSE:To make the surface distribution of a current flowing from a gate electrode to a contact plate almost uniform, and prevent breakdown of an element caused by alloying and the like, by arranging a silicide film having a specific resistance higher than a gate electrode metal, on the periphery of a contact plate of a center gate type GTO. CONSTITUTION:A surface (surface A) contacting with a gate electrode out of two surfaces of a contact plate composed of an Mo plate, a W plate, etc., is subjected to sputtering by applying a target in which molibdenum and silicon Si are mixed with a specified ratio, and processed at a high temperature to form a silicide film (MoSi2) 20. A photo resist film 21 is spread, and its central part is eliminated by an etching method. When the left resist film is exposed at a high temperature, the inside is deformed and the film thickness is made nonuniform. Finally, the silicide film 20 is subjected to etching by applying a resist film, and the silicide film 20 is left in the form of a belt. A gate electrode metal wherein the above contact plate 6 is applied to a semiconductor substrate does not contact with the periphery of the contact plate, but is connected via MoSi2. For example, in the case where the gate metal is Al, a gate current flows through Al, and is divided to flow also into the central part. |
