| 摘要 |
PURPOSE:To form a good-quality vapor-deposited film having excellent adhesive strength on the surface of a substrate by previously cleaning the substrate surface by the irradiation of an ion beam at the time of simultaneously carrying out the irradiation of the substrate by the ion beam and the vapor deposition of a material on the substrate in vacuum to form the thin film. CONSTITUTION:The inside of the vacuum vessel 2 of a vapor-deposited film forming device 1 is evacuated, a shutter 7 for the ion beam IB is opened, and the ion beam IB from an ion source 5 irradiates on the substrate 3 to clean the surface of the substrate 3. A shutter 8 for vapors in then opened, and the vaporized matter VM of the vapor-deposition material 61 in a vapor deposition source 6 is deposited on the substrate 3. In such a process, the deposition rate of the vapor-deposition matter VM from the vapor deposition source 6 is measured by the film thickness meter 9 provided with a sensor 91, the shutters 7 and 8 are closed when the vapor-deposited film is formed on the substrate 3 in the specified thickness, and the vapor deposition reaction is suspended.
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