| 摘要 |
PURPOSE:To perform an electrical scanning in a direction parallel to a pixel row direction instead of a mechanical scanning by providing a substrate contact ohmically contacted with a semiconductor thin layer formed outside a photodiode element arraying region on the array line. CONSTITUTION:Boron B<+> is ion-implanted into a semiconductor thin layer 12 to form a reverse conductivity type region 13, and a photodiode element 15 is formed. A plurality of the elements 15 are arranged in one dimension on the layer 12 to form an element array (photodiode array). Then, a passivation 18 like a zinc sulfide (ZnS) film is formed by a sputtering method or a depositing method on the layer 12, its predetermined part is selectively removed, a substrate contact 14 [formed by depositing, e.g., gold (Au)] and a diode contact 17 [e.g., indium (In) is deposited] in ohmic contact with the layer 12 are formed. |
