发明名称 Semiconductor
摘要 <p>Element with virtually monocrystalline semiconductor body has a contact electrode consisting of a coating grown as a crystal directly on the surface of the semiconductor body, which is separated from a metal cpd., to a thickness of several mm. Specifically, it is precipitated from a gaseous metal compound and reduced with hydrogen. Preferably the metal compound is tungsten hexafluoride or molybdenum hexafluoride.</p>
申请公布号 FR2051360(A5) 申请公布日期 1971.04.02
申请号 FR19700023724 申请日期 1970.06.26
申请人 BROWN BOVERI ET CO SUISS 发明人
分类号 C23C16/14;H01L21/00;(IPC1-7):01L1/00;23C11/00 主分类号 C23C16/14
代理机构 代理人
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