| 摘要 |
PURPOSE:To obtain a laminating type semiconductor device, a wiring distance between elements of which is shortened and the degree of integration of which is improved easily, by burying a wiring material into a through-hole reaching to at least one of a first impurity diffusion layer, a first gate electrode and a first wiring through a second impurity diffusion layer from the surface of a second gate insulating film. CONSTITUTION:A through-hole 63a reaching a first impurity diffusion layer 40a through a second impurity diffusion layer 41a from the surface of a second gate oxide film 21, a through-hole 63b reaching a first impurity diffusion layer 40b and a through-hole 63c reaching a first electrode gate 30b are formed through reactive ion etching. The through-holes 63a, 63b, 63c are buried with a wiring material such as aluminum through a sputtering method, etc., thus shaping inter-layer wirings 73a, 73b, 73c. Accordingly, a wiring distance between an element positioned in a first semiconductor integrated circuit layer and an element in a second circuit layer can be shortened while the degree of integration can be improved only by a section where no through-hole is formed at positions separate from element regions. |
