| 摘要 |
PURPOSE:To obtain an alloy for IC lead frames excellent in stress corrosion cracking resistance and etching workability, by specifying a composition consisting of Ni, Si, Mn, and Fe and also by limiting the amount of C as an impurity. CONSTITUTION:The alloy for IC lead frames excellent in stress corrosion cracking resistance and having superior etching workability is obtained by providing a composition which consists of, by weight, 45-60% Ni, <=0.5% Si, <=1.0% Mn, and the balance essentially Fe and in which C as an impurity is limited to <=0.015% in particular and further N as an impurity is limited, preferably, to <=0.01%. By using the above alloy, semiconductor devices and further electronic products can be made highly reliable.
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