发明名称 MOS TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the charging of a surface protective film by forming an aluminum thin-film shaped to the upper section of the surface protective film being formed, coating a semiconductor device shaped to a semiconductor substrate and connected to said semiconductor substrate. CONSTITUTION:A silicon substrate 3, a surface protective film 4 formed, coating the surface of a semiconductor device shaped to the silicon substrate 3 and an aluminum thin-film 6 formed to the upper section of the surface protective film 4 and connected to the exposed surfaces of the silicon substrates 3 on the outer circumferences of chips and a bonding pad 7 for grounding are included. According to such constitution, the whole semiconductor device is wrapped with a conductor, thus preventing the charging of the surface protective film 4.
申请公布号 JPS63169744(A) 申请公布日期 1988.07.13
申请号 JP19870002256 申请日期 1987.01.07
申请人 NEC YAMAGATA LTD 发明人 KOBAYASHI MASAHIRO
分类号 H01L21/314;H01L21/3205;H01L23/52;H01L29/78 主分类号 H01L21/314
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