| 摘要 |
PURPOSE:To prevent abnormal epitaxial growth generated from the cause of the insufficiency of gas replacement by providing a means interlocking a cover for a chamber at an upper step and a bottom plate for a chamber at an intermediate step while installing a partition wall closing the opening section of the bottom of the chamber at the upper step under the state in which the bottom plate is drawn out of the lower section of the chamber at the upper step. CONSTITUTION:A chamber 2 at an upper step is gas-substituted from clearances in a slidable cover 22. When a rod 24 for interlocking is slid in the direction of the arrow A, the cover 22 and a plate 23 are slid and the chamber 2 at the upper step and the bottom of a substrate supporter 21 are closed. An opening section 25 in the bottom of the chamber 2 at the upper step is closed by a partition wall 26 for the substrate supporter 21 at that time, thus preventing leakage from the chamber 2 at the upper step of a crystal melt 6. Accordingly, the gas displacement of a substrate supporting section is conducted sufficiently under the state in which the bottom of a chamber 4 at an intermediate step is drawn out together with the cover for the chamber 2 at the upper step while the outflow of the crystal melt 2 is inhibited by the partition wall 26.
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