| 摘要 |
PURPOSE:To improve the temperature compensation rate of a diode by forming the diode for compensation a temperature near a transistor element on a single crystal substrate, and connecting by windings the emitter to the base of the element to substantially equalizing the temperature change of the transistor to that of the diode. CONSTITUTION:An NPN type transistor has a P-type region 2 and an N-type region 3 which are formed on an N-type substrate 1, and they form base and emitter regions, respectively. A diode is formed near the transistor. A semiconductor pellet is secured by fusion-bonding an electrode 12 of the bottom of a conductor 25 arranged on an insulating substrate 24 on a metal member 23 to the conductor 25. Since a transistor section 13 and a diode section 14 are associated in the pellet to be disposed at an extremely near interval within a semiconductor crystal, its thermal resistance Rth can be reduced. Thus, the temperature difference between the transistor and the diode (accurately the temperature difference between the emitter junction of the transistor and the P-N junction of the diode) can be substantially eliminated.
|
