| 摘要 |
PURPOSE:To form the polycrystalline SiGe thin film having high mobility electrons while a substrate is being maintained at low temperature by a method wherein an ultraviolet ray pulsed light and the like is made to irradiate on the surface of an amorphous SiGe thin film of the desired thickness. CONSTITUTION:When an ultraviolet ray pulsed light 3 is made to irradiate on the surface of the hydrogenated amorphous SiGe thin film 2 of 500-5,000Angstrom in thickness located on an insulated substrate 1, a polycrystalline SiGe thin film is formed in a fixed depth of the film 2. As a result, the polycrystalline SiGe thin film having high mobility electrons can be formed while the substrate is being maintained at a low temperature.
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