发明名称 BIPOLAR MEMORY
摘要 PURPOSE:To make memory circuits with redundancy suitable for bipolar memories by a method wherein the bases of emitter followers driving word lines are connected to fuses and clamp circuits. CONSTITUTION:Bipolar memories in respective lines of a memory main body 103 are driven through the intermediary of word lines 110 selected by emitter followers 11 the bases of which are connected to low clamp circuits 12 and defective bit cutting off fuses 102. The fuses 102 can be miniaturized by flowing smaller current of 1/(current amplification degree) than that of word lines 110 due to the bipolar memories driven through the intermediary of emitter follower 11. Furthermore, when the fuses 102 are cut off by deflective bit, the potential of defective word line 110 can be clamped down on no-selective potential by the circuits 12 not to saturate a transistor feeding the bipolar memories with constant current so that any defective insulation from bipolar circuits may be prevented from occurring to make memory circuits with redundancy suitable for the bipolar memories.
申请公布号 JPS63168033(A) 申请公布日期 1988.07.12
申请号 JP19860313128 申请日期 1986.12.29
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 OHATA KENICHI;YAMAGUCHI KUNIHIKO;HONMA NORIYUKI;KANETANI KAZUO;MATSUMOTO MASAAKI;NANBU HIROAKI
分类号 H01L21/82;G11C11/34;G11C11/401;G11C29/00;G11C29/04;H01L27/10 主分类号 H01L21/82
代理机构 代理人
主权项
地址