| 发明名称 |
Method for fabricating improved oxide defined transistors |
| 摘要 |
Two insulating layers may be employed to define boundaries of junctions in transistor structures useful in integrated circuit fabrication. The junctions may overlie one another, have approximately equal areas, and terminate in the insulating layers.
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| 申请公布号 |
US4757027(A) |
申请公布日期 |
1988.07.12 |
| 申请号 |
US19870009773 |
申请日期 |
1987.02.02 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
VORA, MADHUKAR B. |
| 分类号 |
H01L21/8222;H01L21/225;H01L21/285;H01L21/331;H01L21/76;H01L27/06;H01L29/08;H01L29/10;H01L29/73;H01L29/732;(IPC1-7):H01L21/385 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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