| 摘要 |
PURPOSE:To enable formation of a sensor element excellent in the sensitivity and electric reliability at a low cost, by forming a silicon substrate and an insulation film on the substrate utilizing a specified oxide single crystal film. CONSTITUTION:A stabilizing zirconia single crystal film 2 is formed on one side of an Si substrate 1 and thermally treated in an oxygen atmosphere to form an SiO2 film 3 between the substrate 1 and the film 2. An Si epitaxial layer 4 is formed thereon and wrought into Si islands by etching. Then, gate insulation films 5 are formed by thermal oxidation. To make a specified transistor by ion implantation, p<+> layers are formed as sources 6 and 12 and as drains 8 and 14 for PNP while p<+> layers as gates 10 and 16 for NPN from above. Gates 7 and 13, drains 9 and 15 and sources 11 and 17 are made as n<+> layers. Then, Si2N4 films 18 are attached separately to the gate insulation films 5. Then, a drain electrode is drawn, an electrode 19 for reference is formed and ion sensitive film-immobilized enzyme composite films 20 are formed separately on the films 18. |
