Forming si oxide regions on si semiconductor - substrate

摘要

Masking film is produced at some locations on a monocrystalline Si body, and prevents oxidation of the subjacent portions of the body. It can be etched by a substance which has little or no effect on SiO2. The non-covered parts are then oxidized. Pref. the film is of e.g. Si nitride and Al2O3, and is etched with hot phosphoric acid.