| 摘要 |
PURPOSE:To form a thin film having high mirror reflectivity by measuring the pressure of an inert gas in a reaction chamber and the temp. in the chamber, and automatically starting sputtering when the measured pressure and temp. reach specified values in the title sputtering device utilizing the inert gas plasma generated in glow discharge. CONSTITUTION:A substrate 2 to be vapor-deposited and a metallic target 4 of Al, an Al alloy, etc., are set in a vacuum chamber 1 in opposition to each other, and the inside of the vacuum chamber 1 is evacuated by vacuum pumps 8 and 9. The target 4 and the vacuum chamber 1 are heated by heaters 5 and 6. When the temp. in the vacuum chamber measured by a thermocouple 13 reaches 100 deg.C, the discharge quantity of the residual gas in the vacuum chamber 1 is measured by a pressure gage 14, a CPU 18 is driven by the output from an arithmetic unit 17 when the quantity becomes <=1X10<-4>Pam<3>/sec to open a valve 11, hence gaseous Ar is supplied into the vacuum chamber 1 from an inlet 10, a power source 12 is energized to generate plasma discharge, and a vapor-deposited film having high mirror reflectivity and resulting from the Al-based metal of the target is formed on the substrate 2 with the ionized gaseous Ar.
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