| 摘要 |
PURPOSE:To effectively execute gas etching cleaning in a short time by etching a solid state pollutant generated at the time of forming an amorphous semiconductor film with a mixed gas consisting of specific ratios of gaseous SF6 and inert gas. CONSTITUTION:A gas for generating the amorphous semiconductor is introduced from a gas introducing port 6 into a reaction chamber 1 and a glow discharge is generated to form the amorphous semiconductor film on a substrate 9. Accompanied with this, the solid state pollutant sticks to an electrode plate 4 and the inner face of the reaction chamber. An electric conductive dummy substrate having almost the same shape as the substrate 9 is therefore put onto a substrate supporting body 2, the mixed gas of the gaseous SF6 with gaseous Ar is introduced from the introducing port 6 and is injected via an injection port 5 against the dummy substrate to generate the glow discharge between the supporting body 2 and the electrode 4; at this time, the molar ratio between the gaseous SF6 and gaseous Ar is specified to (9:1)-(2:8). In this way, the pollutant can be effectively gasified and removed in a short time. |
