| 摘要 |
PURPOSE:To efficiently form the title SiO2 film by ionizing a reactive gas, and then injecting the gas onto a substrate along with the SiO vapor in a graphite crucible at the time of vapor-depositing the thin SiO2 film on the substrate by a cluster-ion vapor deposition method. CONSTITUTION:A reactive gas such as gaseous O2, an O2-mixed gas, or a gas contg. an oxygen element is taken out from a cylinder 41, and injected onto the substrate 1 to be treated in a vacuum vessel 6 from an injection nozzle 44. In this case, the electron beam emitted from a filament 92 heated at about 2,000 deg.C is accelerated by an accelerating electrode 93 to excite, dissociate, or ionize the reactive gas, and the gas is injected onto the substrate 1 at high speed. The SiO 15 in the graphite crucible 12 in the vaporization source 1 is simultaneously heated by a filament 13, vaporized, injected from a nozzle 11, ionized by the electron beam from an ionization filament 21, accelerated by an accelerating electrode 3, and allowed to collide with the substrate 2 as the accelerated flow of SiO or an SiO cluster. s a result, an SiO2 film is formed along with the reactive gas on the surface of the substrate 1 at a high rate.
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