| 摘要 |
A novel method for directly bonding a copper plate to an alumina substrate is disclosed. Also disclosed is a process by which bonded assembles of copper plate and alumina substrate can be produced in large volumes on an industrial scale in high yield and at low cost employing a simplified sequence of steps. According to this process, a copper plate is positioned in contact with an alumina substrate in an inert atmosphere, and the combination is heated to a temperature lower than the melting point of copper (1,083 DEG C.), preferably to a temperature lower than the eutectic point of copper-copper oxide eutectic, for example, to 1,063 DEG C.+/-0.5 DEG C., so that a compound of copper with alumina on the surface of the alumina substrate and a compound of copper with at least one glass forming material on said surface are formed without forming the liquidus eutectic of copper and copper oxide in the area of contact between the copper plate and the alumina substrate, and thereafter the combination is cooled to establish direct bond between the two members. Also disclosed herein are specific techniques that may be employed to produce bonded assemblies in large quantities by the present invention using an industrial conveyor furnace, such as those concerning the method of positioning the combination of copper plates and alumina substrates to be charged into the furnace, the temperature in the furnace and the atmosphere therein.
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