| 摘要 |
PURPOSE:To obtain a solar cell of III-V compound semiconductor having an Si substrate with a thickness of 100 mum or less and still free of warpage, by vapor depositing silver to a specified thickness at a specified substrate heating temperature on the rear face of the silicon substrate and then heat treating the wafer at a temperature for alloying an electrode on the III-V compound semiconductor layer. CONSTITUTION:After a GaAs deposit layer 2 is deposited on an Si substrate having a thickness of about 280 mum, the Si substrate is etched from the rear such that the thickness is reduced to 100 mum or less. Upon termination of the etching to reduce the thickness of the substrate, the wafer is warped remarkably. This wafer is fixed by an appropriate jig and electrode metals 3, Ti, Pd and Ag for example are vapor deposited in that order on the rear face of the Si substrate. The Ag metal layer particularly is vapor deposited at a substrate heating temperature of 50-150 deg.C to a thickness of at least about 3 mum, whereby the warpage of the wafer can be relieved substantially and the resultant solar cell is free of warpage. The wafer is then heat treated at a temperature for alloying the electrode on the GaAs semiconductor layer. |
