| 摘要 |
PURPOSE:To form a silicon oxide film and a silicon nitride film, and, further, form an amorphous silicon film with a high speed, by installing an introduction gas feeding inlet independently of a reaction gas feeding inlet, and introducing an introduction gas into a reaction chamber after turning it into plasma. CONSTITUTION:Before a silicon oxide film is formed on a substrate 2, oxygen or nitrogen suboxide 14 is introduced into a reaction chamber 1 after it is supplied to a plasma generating tube 18 and excited with microwave. The oxygen or the nitrogen suboxide in a excited state reacts with silane 5 which is introduced through a reaction gas feeding inlet 5 and decomposed by a carbon dioxide gas laser beam 2, and forms a silicon oxide film on the substrate 2. When a silicon nitride film is formed on the substrate 2, nitrogen or ammonia 14 is supplied and introduced into the reaction chamber 1 after it is excited with microwave. The nitrogen or ammonia in a excited state forms a silicon nitride film in the same manner. When an amorphous silicon film is formed on the substrate 2 with a high speed, argon 14 is supplied, and, in the same process, the amorphous silicon film can be rapidly formed together with the decomposition action of silane 5.
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