| 摘要 |
PURPOSE:To make the thickness of a resist film uniform by forming both patterns of a lower layer wiring and a through hole on a flat surface before the lower layer wiring is etched. CONSTITUTION:A conductive layer 31 is formed on a substrate 1, on which an insulating film 2 is formed, an insulating film 4, is formed on the conductive layer 31, and an insulating film 8 which has an etching selection ratio higher than the insulating film 41 is formed thinly. Then, a pattern for the first layer wiring and an aperture pattern 51 are simultaneously formed. A pattern 71 is formed and the insulating film 8 is etched by using the pattern 71 as a mask. A pattern 72 is formed by removing the pattern 71. Then, a layer wiring 3 is formed by etching the insulating film 41 and the conductive layer 31 by using the insulating film 8 and the pattern 72, as masks. An interlayer insulating film 42 is formed by removing the pattern 72, a resist film is formed on the interlayer insulating film 42, and the insulating film 42, is etched until the insulating film 8 is exposed. Then, a pattern 73 is formed, a through hole 5 is formed by using the pattern 73 band the insulating film 8 as masks and a layer wiring 6 is formed by removing the pattern 73. This can improve the manufacturing yield.
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