发明名称 FORMING METHOD FOR PHOTORESIST PATTERN
摘要 PURPOSE:To correct the looseness of corner parts due to the lack of exposure by adding recessed corner parts to be adjusting fine patterns to a photomask in case of forming a photoresist pattern by the photomask. CONSTITUTION:In case of forming a photoresist pattern 3 having rectangular windows 2a, 3a, a reference graphic 12 of a simplar pattern is drawn at first, and then fine additional graphics 13a1-13a4 are drawn on four corners of the graphic 12. Then, a photomask having the shape of an exposure part 14a is formed on the basis of the reference graphic 12. A positive type photoresist layer 3' applied to a worked body 2 on a semiconductor substrate 1 is exposed. At that time, the lack of exposure on the four corner of the exposure pattern is corrected by fine patterns 15a1-15a4 to form an objective rectangular pattern (a). When the pattern (a) is developed, a photoresist pattern 3 having accurate rectangular windows 2a, 3a can be obtained.
申请公布号 JPS63165851(A) 申请公布日期 1988.07.09
申请号 JP19860309742 申请日期 1986.12.27
申请人 SONY CORP 发明人 KOMATSU TAKAAKI
分类号 G03F1/00;G03F1/36;G03F1/68;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F1/00
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