| 摘要 |
PURPOSE:To prevent the plating film thickness of an X-ray absorbing pattern from being made not uniform, by arranging an electroplating auxiliary cathode part having a sufficiently large area outside an X-ray exposure region, setting plating conditions based on the area of the auxiliary cathode part, and performing, under the conditions, simultaneously electroplating of the X-ray absorbing pattern part and the electroplating auxiliary part. CONSTITUTION:An X-ray permeable thin film 2 is stacked on one surface of an Si wafer substrate 5. A protective film 6 is formed on the other surface. After a plating base layer 7 and a conductive plating base layer 8 are formed on the X-ray permeable thin film 2, an electric insulator layer 9 is arranged, and an aperture part corresponding with an X-ray absorbing pattern and an aperture corresponding with an electroplating auxiliary cathode part pattern are simultaneously formed. Thus an electric insulator layer pattern 9 is obtained. by electroplating, the aperture part of a resist pattern is plated with Au. The resist pattern is eliminated, unnecessary parts of the plating base layer are eliminated, and an X-ray absorbing pattern 3 of high accuracy and the electroplating auxiliary cathode part pattern 4 are formed. Then a part of the Si wafer is eliminated by etching, a window is formed, and an X-ray exposure mask 1 is obtained. |
