| 摘要 |
PURPOSE:To form very easily a plating electrode in a short time, and prevent generation of dust, by exposing separately an X-ray absorber and a resist for forming an electrode part applying different exposing methods. CONSTITUTION:On a thin film 3 permeable to X ray which is composed of SiN and formed on an Si water 4 by a CVD method, Cr and Au are continuously deposited to form a plating substrate 2. Thereon, an electron beam resist PMMA is subjected to spin coating, and an electron beam resist layer 1 is formed by drying. The SiN film deposited on the rear at the same time as the surface serves as a protective film at the time of Si etching. Then, by an electron beam 7, a pattern is drawn, which is irradiated by far ultraviolet rays 9 from an Xe-Hg lamp. After that, dipping development is performed by a mixed solvent of MIBK (methyl isobutyl ketone) and IPA (isopropyl alcohol), and rinsing is done by using IPA. Thereby a plating substrate 13 is obtained, which has a resist pattern part 11 to form an X ray absorber and an electrode part 12 for plating, and serves as a matrix at the time of electroplating. |
