| 摘要 |
PURPOSE:To simplify a process, and to inhibit the area of a cell at a small value by reacting a metallic layer and an silicon substrate or polysilicon, forming an silicide compound layer and removing the metallic layer left without executing an silicification reaction. CONSTITUTION:A P-type epitaxial layer 2 is grown onto a P<++> type silicon (a crystal fase 100) substrate 1 containing boron in a high concentration. A polysilicon layer 5 containing phosphorus (P) is shaped onto the whole surface, and buried through reactive ion etch ing. A metallic (Ti) layer 9 is formed onto the whole surface, and silicide compound layers (TiSi2 layers) 10 are shaped selectively onto the silicon substrate 1 and the polysilicon layers 5. Since the space of regions 15 on a capacitor insulating film 4 is narrowed extremely as 200Angstrom at that time, the TiSi2 layer 10 is left between these regions 15, thus automatically connecting the polysilicon layers (capacitor electrodes) 5 and adjacent N<+> diffusion layers 8. Accordingly, a process is simplified, and the area of a cell can be reduced. |
