| 摘要 |
PURPOSE:To obtain a semiconductor device having broad-band frequency characteristics, by which the various frequency characteristics of circuits can be measured on wafers, by providing the electrodes of transistors together on a semiconductor substrate, and providing a coplanar input line and a coplanar output line. CONSTITUTION:On a semiconductor substrate 1, the following parts are formed. A gate electrode 6 or a base electrode, a source electrode 5 or an emitter electrode and a drain electrode 7 or a collector electrode are provided together on a transistor 4a. The gate electrode 6 or the base electrode is connected to a first conductor 11a. A second conductor 12 is formed in a coplanar relation with the first conductor 11a. The source electrode 5 or the emitter electrode is connected to the second conductor 12. A coplanar input line 31 has the first and second conductors 11a and 12. A third conductor 13 is provided in coplanar relation with a first conductor 11b. The drain electrode 7 or the collector electrode is connected to the third conductor 13. A coplanar output line 32 has the first and third conductors 11b and 13. Said transistor 4a is an MESFET, which is formed on, e.g., the semi-insulating GaAs substrate 1.
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