发明名称 |
METHOD OF MAKING A GAAS SEMICONDUCTOR DEVICE BY ION IMPLANTATION, AND SUBSTRATE AND DEVICE SO OBTAINED |
摘要 |
The invention relates to a method of treating a substrate of gallium arsenide by a double ion implantation. A first implantation of silicon ions (Si+) is carried out on the entire surface of the substrate, and a second implantation of oxygen ions (O+) is carried out in regions intended to become isolated regions. A thermal annealing treatment, preferably under encapsulation, follows these ion implantations. These implantations are carried out in order to obtain at the surface of the substrate regions of n-conductivity type isolating regions separated from each other for subsequent manufacture of semiconductor devices. The invention also relates to a gallium arsenide substrate thus treated and to a semiconductor device obtained by the technique of two ion implantations. |
申请公布号 |
DE3278598(D1) |
申请公布日期 |
1988.07.07 |
申请号 |
DE19823278598 |
申请日期 |
1982.09.16 |
申请人 |
LABORATOIRES D'ELECTRONIQUE ET DE PHYSIQUE APPLIQUEE L.E.P.;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
BERTH, MICHEL SOCIETE CIVILE S.P.I.D.;VENGER, CAMILLE SOCIETE CIVILE S.P.I.D.;GERARD, MARIE MARTIN SOCIETE CIVILE S.P.I.D. |
分类号 |
H01L21/265;H01L21/31;H01L21/322;H01L21/324;H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|