| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit device having base resistance lower than conventional devices and enabling operation at ultra-high speed by forming a single crystal semiconductor layer extending in an opening section and on an insulating film in the periphery of the opening section through selective epitaxial growth and lateral epitaxial growth. CONSTITUTION:An N<+> type buried diffusion layer 2 is shaped to the surface of a P<-> type silicon substrate 1. An silicon oxide film to which vertical openings 3a, 3b are formed is shaped onto these substrate 1 and layer 2. N<-> type single crystal layers 4a, 4b extending on an oxide film 3 in the periphery of the opening sections 3a, 3b from the opening sections 3a, 3b are grown under decompression through selective epitaxial growth and lateral epitaxial growth, and an oxide film 5 is formed onto the surfaces of the layers 4a, 4b. An N<+> type emitter 12 is shaped into an active base 10 by a diffusion from polycrystalline silicon 11 through annealing. Lastly, a base contact hole is bored, and a metallic electrode 13 is formed. Accordingly, a base leading-out electrode is shaped by single crystal silicon, thus remarkably reducing resistance.
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