| 摘要 |
The present invention relates to a radiation-resistant semiconductor device whose electrical characteristics are not degraded by irradiation with radiation. According to the present invention, an impurity with which a semiconductor body (1) is doped for determining a conductivity type is that one of isotopes of an identical element which has a smaller thermal neutron absorption cross section. For example, boron B having a mass number of 11 serves as an acceptor, and antimony Sb having a mass number of 123 serves as a donor. When irradiated with radiation, the impurity undergoes a nuclear reaction much less than the other isotopes. Therefore, an impurity concentration changes little, and electrical characteristics do not fluctuate. |
