| 摘要 |
PURPOSE:To simplify the steps by diffusing an impurity through the opening of an insulating film and a polysilicon film thereon to simultaneously form a diffusing layer for source, drain electrons, an emitter diffused layer and a collector electrode contact diffused layer. CONSTITUTION:A p-type well, a gain oxide film, a gate electrode, a source, and a drain are formed on a MOSFET on a p-type substrate. A collector region and a base region for an npn transistor are formed. Then, the whole surface is covered with an SiO2 film 22, and source, drain electrode contact windows, an emitter electrode contact window, and a collector electrode contact window are opened. After the whole surface is covered with a polysilicon film 23, As<+> ions are implanted. Then, source, drain contact regions 24, an emitter region 25, a collector contact region 26 can be simultaneously formed. Since the region 25 is formed through the contact window in a self-aligning manner, it can be miniaturized, i.e., highly integrated. |
