| 摘要 |
PURPOSE:To form flat inter-layer-insulating films without cracking of insulating films by executing the process in which the first and second insulating films being in contact with an Al wiring and having high insulating properties are shaped, an organic silicon thin-film is formed between the first and second insulating films, and the organic silicon thin-film is changed into an SiO2 film through treatment in oxygen plasma at a low temperature, plural times. CONSTITUTION:Al wirings 21, 22 are formed onto an insulating film 20, and a first insulating film 23 consisting of SiO2 or Si3N4 having high insulating properties is shaped. An organic silicon thin-film, a projecting section 24 of which has a thickness of 0.05mum and a recessed section of which a thickness of 0.2-0.3mum, is formed through a spin coating method. When the whole is treated at a substrate temperature of 200-300 deg.C for approximately five min in oxygen plasma, CH of RnSi(OH)4-n is oxidized and evaporated, and the organic silicon thin-film is turned into an SiO2 film 26. When the process is repeated three times or four times, an SiO2 film 27, which is not cracked and irregular sections of which are flattened, is shaped. A second insulating film 28 consisting of an SiO2 or Si3N4 film having high insulating properties is formed, and second layer Al wirings 29, 30 are shaped onto the insulating film 28.
|
