| 摘要 |
PURPOSE:To prevent side etching of a conductive film pattern by performing etching after coating the whole rear of a semiconductor substrate. CONSTITUTION:A conductive film 2 is formed above a semiconductor substrate 3 by a sputtering method or the like. A resist pattern 1 for forming a pattern of the conductive film 2 is formed by a photolithography technique. For instance, the rear of the substrate 3 is spin-coated with a resist to form an insulating film layer 4. After that, the pattern of the conductive film 2 is formed by a wet etching process. Thereby, side etching of the pattern of the conductive film 2 can be prevented.
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