| 摘要 |
PURPOSE:To form a shallow impurity introduced region of a high impurity concentration by changing the impurity concentration of an impurity-containing layer provided on the semiconductor substrate so as to control the amount of the impurity penetrating into the semiconductor substrate, thereby preventing the damage of the semiconductor substrate surface. CONSTITUTION:On a semiconductor substrate 1, an impurity containing layer 2 is provided which contains impurity atoms acting as the acceptor or the donor, and by applying a plasma to the containing layer 2, the impurity of the containing layer 2 is caused to penetrate into the substrate 1, thereby forming an impurity introduced region 10 in the substrate 1 surface. At this time, by changing the impurity concentration of the containing layer 2 provided on the substrate 1, the amount of the impurity penetrating into the substrate 1 is controlled. With this, the damage of the substrate 1 surface is prevented, and a shallow region of a high impurity concentration is formed.
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