| 摘要 |
PURPOSE:To prevent the reliability from decreasing by coating a semiconductor substrate with part of all coating amount, then sintering it, and thereafter adhering remaining aluminum or aluminum alloy to suppress the eutectic crystallization of Al in a wiring layer and Si in a diffused region, thereby preventing a connecting part from thinning. CONSTITUTION:In a semiconductor device in which a wiring layer is formed of aluminum or aluminum alloy on a semiconductor substrate, when the substrate is coated with the aluminum or the aluminum alloy, it is coated with part of the all coating amount, then sintered, and the remaining aluminum or aluminum alloy is thereafter adhered. For example, after the formations of a diffused region 2 and the opening 4 of an SiO2 coating film 3 are finished on an Si substrate 1, it is coated with an aluminum wiring layer partly 4000Angstrom of 8000Angstrom of total thickness, and then heat treated as sintering at 450 deg.C for 30 min. in foaming gas. Then, it is then coated with 4000Angstrom of the remainder 7 of the wiring layer, and a first layer and wiring layers 6, 7 of second layer are then formed together in a PEP step in the same pattern.
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