| 摘要 |
PURPOSE:To obtain a bonding junction part having an enough junction strength without deforming or damaging an Al electrode, an SiO2 layer, which is the lower layer of the electrode, and an Si layer by providing a copper deposited layer on the electrode part of a semiconductor element. CONSTITUTION:An Al electrode 3 is provided on a semiconductor element 2 die-bonded on a lead frame 1. Copper is deposited on a first deposited layer 5 formed of a metal rigid compared to Al, such as titanium, on this Al electrode 3 to form a second deposited layer 6. The deposited layer 6 and a terminal 4 of the lead frame 1 are wire-bonded by a copper wire 7. Accordingly, a copper ball 8 formed on the point of the copper wire 7 at the time of wire-bonding is pressed by the deposited layer 6, but the pressing force is dispersed by the deposited layer 6 of nearly the same hardness as that of the copper ball 8 and an excessive stress is prevented from being applied to the electrode 3. Therefore, the electrode 3, an SiO2 layer, which is the lower layer of the electrode, and an Si layer 9 are prevented being deformed or damaged. |
