| 摘要 |
PURPOSE:To permit elimination of displacement by the displacement and adhesion of a coupled part arising from a difference in the coefft. of expansion between a semiconductor laser and waveguide part by monolithically integrating the semiconductor laser, photodetector and condenser lens system on an Si substrate. CONSTITUTION:The semiconductor laser 6 is integrally constituted of the Si substrate 1, a buffer layer having the inclined type compsn. of InxGa1-xP10, AlGaInP clad layers 11, 13, an InGaP active layer 12, a P-type embedded AlGaInP layer 15 and an N-type AlGaInP embedded layer 16. A diffraction grating is formed in the active layer 12 and the optical waveguide layer 14 having the compsn. between the compsns. of the clad layers 11, 13. Electric current injected from an electrode 17 oscillates laser light in the active region 12 and the feedback of the light is executed by the diffraction grating 14, by which single mode oscillation is executed. The oscillated light is introduced into the waveguide layer 14. The thicknesses of the clad layer 17 and waveguide 8 are so adjusted that the laser light passing the active part 12 and waveguide layer 14 of the semiconductor laser 6 is introduced to the outside waveguide part 8. |
