| 摘要 |
PURPOSE:To make it possible to utilize the output signal from a picture element at an end part effectively as an image signal, by forming a dummy electrode in the neighborhood of the picture element electrode of the picture element at the end part of the picture element arrangement on a image sensing element chip. CONSTITUTION:On a semiconductor substrate 11, an arrangement of signal- charge storing diodes 13 and an arrangement of signal-charge reading parts are formed. An arrangement of picture element electrodes 19, which are electrically connected to said signal-charge storing diodes 13, is formed on the uppermost part in a solid-state image sensing element chip 1. A photoconductive film 2 is laminated on the chip 1 as a optoelectronic transducer part. In this solid-state image sensing device, a dummy electrode 20 is formed in the neighborhood of the picture element electrode 19 at the end part of the arrangement of the picture elements 19. A transparent electrode 24 is formed out of ITO and the like on the photoconductive film 2. Parts of the photoconductive film 2 and the transparent electrode 24 on the dummy electrode 20 are etched away. A specified voltage is applied to the dummy electrode 20 from the outside through the exposed part of the dummy electrode. |
