| 摘要 |
PURPOSE:To permit monitoring of a crystal condition, etc., of a silicide compd. during a production process of semiconductors by determining two min. points or inflection points which depend on the grain size of the crystal in the surface reflection spectral curve of an object to be measured. CONSTITUTION:The peak which indicts the crystallinity of the silicide crystal, more particularly WSi2 in the surface reflection spectral curve of the object to be measured in the case of using a UV spectroscopic method is 290nm (4.28eV) peak and the min. or inflection points appear near 270nm and 350nm on both sides thereof. The curve enclosed by the line connecting these two min. points or inflection points and the spectral curve or the height of the perpendicular from the max. point of the spectral curve between the two points down to the line connecting the two points is, therefore, the data corresponding to the peak indicating the crystallinity of the WSi2 crystal. The grain size of the WSi2 crystal is thus known by using such data and the crystallinity thereof is thereby measured.
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