发明名称 THIN FILM VAPOR DEPOSITION DEVICE
摘要 PURPOSE:To execute vapor deposition of a thin film having high quality, by permitting intermittent impression of an ionizing voltage between a filament and electron drawing out electrode, capturing the electric current of cluster ions flying toward a substrate and measuring the size of the clusters. CONSTITUTION:Vapor of a material 5 to be deposited by evaporation is ejected from an evaporation source 8 provided in a vacuum vessel 1 to generate the clusters. The clusters are ionized by drawing out the thermoelectrons emitted from the filament 9 by the electron drawing out electrode 10 and bringing the same into collision against the clusters. The cluster ions formed in such a manner are accelerated by an accelerating electrode 14 and are bombarded together with the neutral clusters against the substrate 10 to form the thin film by vapor deposition on the substrate. The thin film vapor deposition device constituted in the above-mentioned manner is so formed that either of a power supply 30 for ionization and a circuit 35 for intermittent impression of the ionizing voltage can be selected by a selector switch 36; further, a Faraday cage 30 to capture the cluster ions flying toward the substrate 10 is disposed. The ordinary thin film vapor deposition is thereby executed. The cluster sizes are measured at need and the control thereof is executed.
申请公布号 JPS63162860(A) 申请公布日期 1988.07.06
申请号 JP19860315106 申请日期 1986.12.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUKASAKI TAKASHI
分类号 C23C14/32 主分类号 C23C14/32
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