发明名称 SEMICONDUCTOR INTEGRATING CIRCUIT
摘要 <p>PURPOSE:To obtain a required integrating circuit without using a large area of an element by arranging a switching element so that the time constant of the integrating circuit is changed at the rise and decay of an input signal. CONSTITUTION:When an input signal Vi is in the high level, a switch MOSFET T1 is off and an output Vo is in the high level. When the signal Vi is turned to the low level, the FET T1 is turned on by an inverter G1, the charge of the capacitance C is pulled ut from R2 like the FET T1 and the output Vo is suddenly decayed at a time constant R2.C. When the input signal Vi is turned to the high level again, the FET T1 is turned off and the capacitance C is charged by resistors R1+R2, so that the output Vo is gradually raised at a time constant (R1+R2).C.</p>
申请公布号 JPS59143419(A) 申请公布日期 1984.08.17
申请号 JP19830017353 申请日期 1983.02.07
申请人 HITACHI SEISAKUSHO KK 发明人 TSUBOI TOSHIFUMI;SAKAKIBARA YASUHIRO
分类号 H03K5/04;H03K5/13 主分类号 H03K5/04
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