| 摘要 |
PURPOSE:To facilitate oscillation of a plurality of laser beams per laser device by a method wherein a vertical structure in which a plurality of semiconductor laser layers which have basic components for the laser oscillation are built up on a substrate is employed. CONSTITUTION:A p-type AlGaAs cladding layer 4a, an undoped A GaAs active layer 3a and an n-type AlGaAs cladding layer 2a are deposited in this order on a p-type GaAs contact 1 layer 5; further, an n-type GaAs contact layer 5a is built up on the cladding layer 2a; and an electrode 9 is formed and an electrode 8a is formed on the contact layer 5 independently. Although a vertical multilayer structure wherein a plurality of semiconductor laser layers are symmetrically arranged with the contact layer 5 between is employed, as far as the n-type cladding layer 2 and p-type cladding layer 4 and the n-type cladding layer 2a and p-type cladding layer 4a belonging to the respective semiconductor laser layers are concerned, the layers through which currents are made to flow are selected from at least one type layers between the n-type cladding layers and p-type cladding layers and current constricting layers for stabilizing the lateral distribution of oscillated laser beams can be formed.
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