| 摘要 |
PURPOSE:To prevent the generation of defects such as defective insulation, disconnection, etc., when multilayer interconnection is conducted by etching a metallic film in a tapered manner to form a wiring, shaping a side wall-shaped insulating film onto the side surface of the metallic wiring and forming an inter-layer insulating film. CONSTITUTION:SiO2 6 is shaped onto an Si substrate 5, Al 7 is formed onto the SiO2 6, and a resist pattern 8 with a wiring pattern to be shaped is formed onto Al 7. When etching is executed in order of anisotropy, isotropy and anisotropy, using the resist pattern 8 as a mask and the resist pattern 8 is removed, a tapered Al wiring 7a can be shaped. When PSG 9 is formed onto the Al wiring 7a and exposed SiO2 6 and the PSG 9 is etched in an anisotropic manner, a side wall 9a can be shaped onto the side surface of the Al wiring 7a. When an inter-layer insulating film 10 is formed, the steep Al wiring 7a is corrected smoothly by the side wall 9a, thus also smoothing the surface shape of the inter-layer insulating film 10.
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