| 摘要 |
PURPOSE:To prevent the generation of cracks in a thin-film as a protective firm on the surface of a semiconductor pellet by forming a vertically communicated slit to the arbitrary section of a wiring layer electrically connecting each region on an silicon substrate. CONSTITUTION:A first insulating layer 2 is deposited onto the upper surface of an silicon substrate 1, and a first wiring layer 3 is shaped onto the upper surface of the first insulating layer 2. The upper surface of the first wiring layer 3 is coated with a second insulating layer 4, and a second wiring layer 5 is formed onto the upper surface of the second insulating layer 4. A vertically communicated slit 5a is shaped to a section crossing with the first wiring layer 3 as the large section of the inrregularities of foundation structure in the second wiring layer 5. Accordingly, since the slit 5a is formed, an upward projected hillock 6 generated in the first wiring layer 3 is positioned into the slit 5a, thus preventing the short circuit of the first wiring layer 3 and the second wiring layer 5.
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